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Si pn-junction diodeHori, Nobuhiko*; Esaka, Fumitaka; Udono, Haruhiko*
no journal, ,
Magnesium half silicide is a semiconductor with an indirect energy gap of about 0.6 eV at room temperature. This material is attracting attention as a suitable material for Si-based infrared photo detector. In this study, Ag diffusion coefficient was evaluated for the Ag diffused MgSi substrate using a conventional sputter etching. In addition, the sensitivity of the diode was improved by controlling the Ag diffusion depth. As the result, the sensitivity of the diode with the diffusion depth of 20 
m was four times higher than that with the diffusion depth of 80 m.
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
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no abstracts in English
Au(111) surfaceTsuda, Yasutaka*; Oka, Kohei*; Makino, Takamasa*; Lehmuskoski, J.*; Okada, Michio*; Di
o, W. A.*; Kasai, Hideaki*; Yoshigoe, Akitaka; Teraoka, Yuden
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no abstracts in English
/Si(001) interfacesOgawa, Shuichi*; Tang, J.*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Teraoka, Yuden; Takakuwa, Yuji*
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no abstracts in English
Otobe, Tomohito; Yabana, Kazuhiro*; Shinohara, Yasushi*; Sato, Shunsuke*; Bertsch, G. F.*
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We revise the familiar Keldysh formula for the solid states in a simpler formulation. Our formula unable us to analyze the 
-th photon process and the distribution of the electron-hole pair in Bloch phase space.
Ishino, Masahiko; Maruyama, Momoko; Hasegawa, Noboru; Nishikino, Masaharu; Tamotsu, Satoshi*; Faenov, A.*; Pikuz, T.*; Kawachi, Tetsuya; Yamagiwa, Mitsuru
no journal, ,
no abstracts in English
Kumada, Takayuki; Akagi, Hiroshi; Itakura, Ryuji; Otobe, Tomohito; Yokoyama, Atsushi
no journal, ,
It has been proposed that not only thermal but also non-thermal effect plays an important role on femtosecond laser ablation. In this study, we develop a high-sensitivity time-resolved reflectivity measurement system to study the non-thermal effect on the femtosecond laser ablation of polymers.
Jinno, Satoshi*; Tanaka, Hirotaka*; Kanasaki, Masato; Sakaki, Hironao; Kondo, Kiminori; Matsui, Ryutaro; Kishimoto, Yasuaki; Fukuda, Yuji
no journal, ,
Laser-driven ion acceleration, featured by its huge accelerating electric field gradient and short pulse length, has been one of the most active areas of research during the last several years, because ion beams generated from such compact sources can be employed in a broad range of applications. Here, the state of material is a key ingredient, which determines the characteristics of the interaction. We present the development of a new nozzle equipped with a liquid He cooling head, which has a potential to produce submicron-sized H
clusters. Such H clusters could produce "pure" proton beams with energies of 100 MeV by using the upgraded J-KAREN-P laser.
Kubota, Masato; Miyadera, Tetsuhiko*; Sakurai, Takeaki*; Yoshida, Yuji*
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no abstracts in English
Kawabata, Shunsuke*; Saruya, Ryota*; Kato, Hijiri*; Araki, Jun*; Miura, Kenta*; Kada, Wataru*; Sato, Takahiro; Koka, Masashi; Ishii, Yasuyuki; Kamiya, Tomihiro; et al.
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no abstracts in English
Hasegawa, Mika*; Suto, Ryota*; Sugawara, Kenta*; Sambonsuge, Shota*; Haramoto, Naoki*; Teraoka, Yuden; Yoshigoe, Akitaka; Fukidome, Hirokazu*; Suemitsu, Maki*
no journal, ,
no abstracts in English
Ishii, Yasuyuki; Okubo, Takeru
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no abstracts in English
O film by means of ion beam sputter depositionFujita, Masaya*; Yamaguchi, Kenji; Asaoka, Hidehito; Mao, W.*; Chikada, Takumi*; Suzuki, Akihiro*; Terai, Takayuki*
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no abstracts in English
-ray irradiation effect on SiC MOSFETs with gate-bias voltageMurata, Koichi; Mitomo, Satoshi; Matsuda, Takuma; Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
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no abstracts in English
Abe, Hiroshi; Tokuhira, Shinnosuke*; Shimomura, Takuya; Shimada, Yukihiro*; Takenaka, Yusuke*; Furuyama, Yuta*; Nishimura, Akihiko; Daido, Hiroyuki; Uchida, Hirohisa*; Oshima, Takeshi
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no abstracts in English
Sasaki, Akira; Sunahara, Atsushi*; Nishihara, Katsunobu*
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no abstracts in English
-rays at elevated temperatureMatsuda, Takuma; Yokoseki, Takashi; Mitomo, Satoshi; Murata, Koichi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; et al.
no journal, ,
no abstracts in English
-ray irradiation effect on SiC-MOSFETMitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi; Makino, Takahiro; Abe, Hiroshi; Onoda, Shinobu; Oshima, Takeshi; Okubo, Shuichi*; Tanaka, Yuki*; et al.
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no abstracts in English
Entani, Shiro; Naramoto, Hiroshi*; Sakai, Seiji
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Entani, Shiro; Honda, Mitsunori; Shimoyama, Iwao; Okamoto, Yoshihiro; Naramoto, Hiroshi*; Yaita, Tsuyoshi; Sakai, Seiji
no journal, ,
no abstracts in English